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| Ordering number : ENA1141B EMH2407 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET EMH2407 Features * * * * General-Purpose Switching Device Applications Low ON-resistance. Best suited for LiB charging and discharging switch. Common-drain type. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW10s, duty cycle1% When mounted on ceramic substrate (900mm20.8mm) 1unit When mounted on ceramic substrate (900mm20.8mm) Conditions Ratings 20 12 6 40 1.3 1.4 150 --55 to +150 Unit V V A A W W C C Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs Conditions ID=1mA, VGS=0V VDS=20V, VGS=0V VGS=8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=3A Ratings min 20 1 10 0.5 3 5 1.3 typ max Unit V A A V S Marking : LG Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. www.semiconductor-sanyo.com/network 90308 TI IM / 80608 TI IM / 31908PE TI IM TC-00001276 No. A1141-1/4 EMH2407 Continued from preceding page. Parameter Symbol RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID=3A, VGS=4.5V ID=3A, VGS=4V ID=1.5A, VGS=2.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=4.5V, ID=6A VDS=10V, VGS=4.5V, ID=6A VDS=10V, VGS=4.5V, ID=6A IS=6A, VGS=0V Ratings min 13 14 16 typ 19 20 28 580 95 75 310 1020 3000 2250 6.3 0.83 1.9 0.78 1.2 max 25 26 39 Unit m m m pF pF pF ns ns ns ns nC nC nC V Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Package Dimensions unit : mm (typ) 7045-006 Electrical Connection 8 0.2 7 6 5 0.2 8 5 0.125 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain 6 : Drain 7 : Drain 8 : Drain Top view 1.7 2.1 0.5 2.0 0.2 1 4 1 2 3 4 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : EMH8 Switching Time Test Circuit VIN 4.5V 0V VIN ID=3A RL=3.33 VOUT VDD=10V 0.05 0.75 D PW=10s D.C.1% Rg G P.G EMH2407 50 S Rg=2k No. A1141-2/4 EMH2407 4.5V 4.0V 6 ID -- VDS 2.5V 7 ID -- VGS VDS=10V 2.0 V 6 5 3.5V Drain Current, ID -- A Drain Current, ID -- A 1.8V 5 4 4 3 3 Ta=7 5C 0 0.2 0.4 0.6 0.8 1.0 1.2 2 VGS=1.5V 2 1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 25C 1.4 1.6 1 --25C 1.8 Drain-to-Source Voltage, VDS -- V 60 IT13201 60 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V IT13202 RDS(on) -- Ta Ta=25C Static Drain-to-Source On-State Resistance, RDS(on) -- m 50 ID=1.5A 3A Static Drain-to-Source On-State Resistance, RDS(on) -- m 50 40 40 30 30 =2 V GS =1. , ID .5V 5A 20 20 A =3.0 , ID 4.0V = 3.0A VGS , I D= 4.5V = VGS 10 10 0 0 1 2 3 4 5 6 7 8 IT13203 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V 10 Ambient Temperature, Ta -- C 10 7 5 3 2 1.0 7 5 3 2 IT13204 yfs -- ID IS -- VSD VGS=0V Forward Transfer Admittance, yfs -- S 7 5 VDS=10V 2 = Ta 1.0 7 5 3 2 --2 C 5 C 75 C 25 Source Current, IS -- A 3 3 2 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 IT13205 0.01 0.2 0.1 0.01 0.4 Ta=7 5C 25C --25 C 0.6 0.1 7 5 0.8 1.0 1.2 IT13206 Drain Current, ID -- A 7 5 SW Time -- ID td(off) VDD=10V VGS=4.5V 2 Ciss, Coss, Crss -- VDS f=1MHz Diode Forward Voltage, VSD -- V Switching Time, SW Time -- ns 1000 tf Ciss, Coss, Crss -- pF 3 2 7 5 3 2 Ciss 1000 7 5 tr 100 7 5 3 Coss Crss td(on) 3 2 0.1 2 3 5 7 1.0 2 3 5 7 10 0 2 4 6 8 10 12 14 16 18 20 Drain Current, ID -- A IT13207 Drain-to-Source Voltage, VDS -- V IT13208 No. A1141-3/4 EMH2407 4.5 4.0 3.5 VGS -- Qg VDS=10V ID=6A Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 ASO IDP=40A PW10s 0 1m s s ms 10 ID=6A 3.0 2.5 2.0 1.5 1.0 0.5 0 0 1 2 3 4 5 6 7 IT13209 10 DC op 10 era 0m s tio n( Ta = Operation in this area is limited by RDS(on). 25 C ) 0.01 0.01 Ta=25C Single pulse When mounted on ceramic substrate (900mm20.8mm) 1unit 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Total Gate Charge, Qg -- nC 1.6 PD -- Ta When mounted on ceramic substrate (900mm20.8mm) Drain-to-Source Voltage, VDS -- V IT13210 Allowable Power Dissipation, PD -- W 1.4 1.3 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 To t al 1u di ss ni ip t ati on Ambient Temperature, Ta -- C IT13211 Note on usage : Since the EMH2407 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.ged objects.ged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of September, 2008. Specifications and information herein are subject to change without notice. PS No. A1141-4/4 |
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